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 GaAs Hall Element
HG-106C
*High-stability GaAs Hall element. *Ultra mini-mold SMT package. *Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems.
*Absolute Maximum Ratings
Item Symbol Limit Unit
Max. Input Voltage Max. Power Dissipation Operating Temp. Range Storage Temp. Range
Vin PD Topr. Tstg.
10 150 -40 to +125 -40 to +150
V mW C C
*Dimensional Drawing (mm) *Electrical Characteristics(Ta=25C)
0.3 1.50.1 0.9 0.3 0.3
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit 1 4
Output Hall Voltage
VH
B=0.1T, Vc=6V
110
150
mV
0 to 0.1
Input Resistance Output Resistance Offset Voltage
Rin Rout Vos
B=0T, Ic=0.1mA B=0T, Ic=0.1mA B=0T, Vc=6V
650 650 -11
850
2.50.2 1.50.1
850 +11 mV
3
N
5
2 Temp. Coefficient of VH VH 25C to 125C -0.06 %/C
3
0.1
Temp. Coefficient of Rin Linearity of output Hall voltage
Rin B=0T, Ic=0.1mA
0.3
%/C
0.25
3
K
B=0.1/0.5T, Ic=0.5mA
2
%
0.60.05
Notes : 1. VH = VHM - Vos (VHM:meter indication)
1 -V 2. VH = VH (T1) X VH (T2) - T H) (T1) X 100 (T2 1 1 Rin (T2) - Rin (T1) X 100 3. Rin = Rin (T1) X (T - T )
2 1
0.35
5
Pinning Input Output 1() 2() 3 4 () ()
K (B1) - K (B2) 4. K = [K (B1) + K (B2)] / 2 X 100
T1 = 25C, T2 = 125C K=
VH IC * B
B1 = 0.5T, B2 = 0.1T
*Characteristic Curves Allowable Package Power Dissipation (PD-Ta)
200
Power Dissipation(mW)
160
120
80
40
0
0
20
40
60
80
100
120
140
Ambient Temperature.(C)
36
HG-106C
Rin-T
1000
VH-B
600 500 400 300 200 100 0 0
Ic const Vc const Ic = 10 (mA) Vc = 6 (V) Ta = 25 (C)
b
Input Resistance:Rin( )
Output Voltage:VH(mV)
800
600
Ic Vc
c
400
200
0 -50
0
50
Ambient Temperature(C)
100
150
100
200
300
Magnetic Flux Density B (mT)
VH-T
200 Ic
Output Voltage:VH(mV)
VH-Vc, VH-Ic
250 200
Ic const Vc const B = 0.1 (T) Ta = 25 (C)
150
Vc
Output Voltage:VH(mV)
Vc Ic
150
100
Ic const Vc const Ic = 10 (mA) Vc = 6 (V) B = 0.1 (T)
100
50
50
Ic:(mA)
g
0 2 4 6 8 10 Vc:(V)
0 -50
0
50
Ambient Temperature(C)
100
150
0
Ic (mA) Input Current Vc (V) Input Voltage
Vos-T
8 7
Vos-Vc, Vos-Ic
15
Ic const Vc const
Offset Voltage:Vos(mV)
6 5 4 3 2 1 0 -50
Ic Vc
Offset Voltage:Vos(mV)
10
B = 0 (mT) Ta = 25 (C)
Vc 5 Ic
Ic const Vc const Ic = 10 (mA) Vc = 6 (V) B = 0 (mT)
j
0 0 50
Ambient Temperature(C)
100
150
0
2
4
6
8
Ic:(mA) 10 Vc:(V)
Ic (mA) Input Current Vc (V) Input Voltage
*Magnetic Flux Density 1(mT)=10(G)
In This Example : Rin=750( ), Vos=4.6(mV), Vc=6(V)
37


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