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GaAs Hall Element HG-106C *High-stability GaAs Hall element. *Ultra mini-mold SMT package. *Shipped in packet-tape reel (4000pcs per reel). Note : It is requested to read and accept "IMPORTANT NOTICE". Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. *Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Voltage Max. Power Dissipation Operating Temp. Range Storage Temp. Range Vin PD Topr. Tstg. 10 150 -40 to +125 -40 to +150 V mW C C *Dimensional Drawing (mm) *Electrical Characteristics(Ta=25C) 0.3 1.50.1 0.9 0.3 0.3 Item Symbol Conditions Min. Typ. Max. Unit 1 4 Output Hall Voltage VH B=0.1T, Vc=6V 110 150 mV 0 to 0.1 Input Resistance Output Resistance Offset Voltage Rin Rout Vos B=0T, Ic=0.1mA B=0T, Ic=0.1mA B=0T, Vc=6V 650 650 -11 850 2.50.2 1.50.1 850 +11 mV 3 N 5 2 Temp. Coefficient of VH VH 25C to 125C -0.06 %/C 3 0.1 Temp. Coefficient of Rin Linearity of output Hall voltage Rin B=0T, Ic=0.1mA 0.3 %/C 0.25 3 K B=0.1/0.5T, Ic=0.5mA 2 % 0.60.05 Notes : 1. VH = VHM - Vos (VHM:meter indication) 1 -V 2. VH = VH (T1) X VH (T2) - T H) (T1) X 100 (T2 1 1 Rin (T2) - Rin (T1) X 100 3. Rin = Rin (T1) X (T - T ) 2 1 0.35 5 Pinning Input Output 1() 2() 3 4 () () K (B1) - K (B2) 4. K = [K (B1) + K (B2)] / 2 X 100 T1 = 25C, T2 = 125C K= VH IC * B B1 = 0.5T, B2 = 0.1T *Characteristic Curves Allowable Package Power Dissipation (PD-Ta) 200 Power Dissipation(mW) 160 120 80 40 0 0 20 40 60 80 100 120 140 Ambient Temperature.(C) 36 HG-106C Rin-T 1000 VH-B 600 500 400 300 200 100 0 0 Ic const Vc const Ic = 10 (mA) Vc = 6 (V) Ta = 25 (C) b Input Resistance:Rin( ) Output Voltage:VH(mV) 800 600 Ic Vc c 400 200 0 -50 0 50 Ambient Temperature(C) 100 150 100 200 300 Magnetic Flux Density B (mT) VH-T 200 Ic Output Voltage:VH(mV) VH-Vc, VH-Ic 250 200 Ic const Vc const B = 0.1 (T) Ta = 25 (C) 150 Vc Output Voltage:VH(mV) Vc Ic 150 100 Ic const Vc const Ic = 10 (mA) Vc = 6 (V) B = 0.1 (T) 100 50 50 Ic:(mA) g 0 2 4 6 8 10 Vc:(V) 0 -50 0 50 Ambient Temperature(C) 100 150 0 Ic (mA) Input Current Vc (V) Input Voltage Vos-T 8 7 Vos-Vc, Vos-Ic 15 Ic const Vc const Offset Voltage:Vos(mV) 6 5 4 3 2 1 0 -50 Ic Vc Offset Voltage:Vos(mV) 10 B = 0 (mT) Ta = 25 (C) Vc 5 Ic Ic const Vc const Ic = 10 (mA) Vc = 6 (V) B = 0 (mT) j 0 0 50 Ambient Temperature(C) 100 150 0 2 4 6 8 Ic:(mA) 10 Vc:(V) Ic (mA) Input Current Vc (V) Input Voltage *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=750( ), Vos=4.6(mV), Vc=6(V) 37 |
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